vs-60EPS16PBF www.vishay.com vishay semiconductors revision: 18-aug-11 1 document number: 94346 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage input rectifier diode, 60 a features ? designed and qual ified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec applications ? typical applications are in input rectification and these products are designed to be used with vishay hpp switches and output rectifie rs which are available in identical package outlines. description the vs-60EPS16PBF rectifier hi gh voltage seri es has been optimized for very low forwar d voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. product summary package to-247ac modified i f(av) 60 a v r 1600 v v f at i f 1.07 v i fsm 950 a t j max. 150 c diode variation single die ba s e cathode 2 13 anode cathode to-247ac mo d i?e d major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 60 a v rrm 1600 v i fsm 950 a v f 60 a, t j = 25 c 1.07 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-60EPS16PBF 1600 1700 1 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 118 c, 180 conduction half sine wave 60 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 950 10 ms sine pulse, no voltage reapplied 1100 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 4512 a 2 s 10 ms sine pulse, no voltage reapplied 6300 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 63 000 a 2 ? s
vs-60EPS16PBF www.vishay.com vishay semiconductors revision: 18-aug-11 2 document number: 94346 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 30 a, t j = 25 c 1.0 v 60 a, t j = 25 c 1.07 forward slope resistance r t t j = 150 c 3.96 m ? threshold voltage v f(to) 0.74 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 1.0 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.35 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6.0 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac modified (jedec) 60eps16
vs-60EPS16PBF www.vishay.com vishay semiconductors revision: 18-aug-11 3 document number: 94346 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 140 150 130 120 110 100 maximum allowable case temperature (c) average forward current (a) 10 20 60 70 30 40 50 0 30 60 90 120 180 60eps.. series r thjc (dc) = 0.35 k/w conduction angle ? 110 120 130 140 150 maximum allowable case temperature (c) average forward current (a) 20 40 60 100 80 0 dc 30 60 90 120 180 60eps.. series r thjc (dc) = 0.35 k/w ? conduction period 0 10 20 30 40 50 60 70 80 90 maximum average forward power loss (w) average forward current (a) 20 10 30 40 50 60 70 0 rms limit 180 120 90 60 30 60eps.. series t j = 150 c conduction angle ? 0 90 80 70 60 50 40 30 20 10 100 110 maximum average forward power loss (w) average forward current (a) 20 80 100 40 60 0 dc 180 120 90 60 30 rms limit 60eps.. series t j = 150 c ? cond u ction period 900 800 700 600 500 400 300 1000 peak half sine wave forward current (a) number of equal amplitude half cycle current pulse (n) 10 100 1 60eps.. series at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 800 600 400 200 1200 1000 peak half sine wave forward current (a) pulse train duration (s) 1 0.01 0.1 60eps.. series maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied
vs-60EPS16PBF www.vishay.com vishay semiconductors revision: 18-aug-11 4 document number: 94346 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 1 - thermal impedance z thjc characteristics 1000 10 1 instantaneous forward current (a) instantaneous forward voltage (v) 1.0 0.5 1.5 2.0 4.0 4.5 2.5 3.0 3.5 0 100 t j = 25 c 60eps.. series t j = 150 c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 10 steady state v al u e (dc operation) 60eps.. series single p u lse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
vs-60EPS16PBF www.vishay.com vishay semiconductors revision: 18-aug-11 5 document number: 94346 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (60 = 60 a) 3 - circuit configuration: 4 - package: p = to-247ac modified 5 - type of silicon: s = standard recovery rectifier 6 - voltage rating (16 = 1600 v) 7 - pbf = lead (pb)-free e = single diode device code 6 2 4 3 5 7 60 e p s 16 pbf vs- 1 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95253 part marking information www.vishay.com/doc?95255
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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